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Investigation Of InN-Based Semiconductors Prepared Using Sol-Gel Spin Coating Method

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Assoc. Prof. Dr. Ng Sha Shiong

Institute of Nano Optoelectronics Research & Technology (INOR)

Email : shashiong@usm.my

Phone No. : +6(04) 653 (Ext) 5642


Objectives

  • To explore the growth of undoped and doped InN thin films prepared by sol-gel spin coating technique. This includes the investigation of the influences of the growth conditions (i.e., growth temperature, growth duration, and precursor concentration) on the quality and properties of the deposited films.
  • To investigate the influences of the p-type doping concentration on the fundamental properties of the InN thin film.

Impact To Goverment / Industry / Academic / Society


The research track record and the output from FRGS grant resulted:

  • An international funding (Nippon Sheet Glass Foundation for Materials Science and Engineering) with amount of RM 20,251.70 was secured.
  • Papers published from this grant were cited 20 times (cumulatively).
  • Editors from ISI-/SCOPUS indexed journals invited me to review few related manuscripts.
  • International conference organizer (i-TREC 2019) invited me as Invited Speaker.
  • Researcher from Iran contacted to get some advise about the research project.

Summary of Research Output

Main equipment and the reaction setup for synthesizing lnN thin films

MSM metal mask, and lnN-based photodetectors and its photoresponse properties at bias voltages of 1 and 3 V .